Samsung sees HBM near 30 percent DRAM capacity
Samsung Electronics projects that high-bandwidth memory will reach nearly thirty percent of industry DRAM wafer capacity next year. The growth may constrain standard DRAM supply as HBM demand for artificial intelligence computing continues to expand across the market.
Xurve View
Insights:
Xurve View
High-bandwidth memory will reach nearly 30% of total industry DRAM wafer capacity next year, according to SAMSUNG ELECTRONICS CO LTD. That projection marks a sharp increase from about 20% currently. The shift highlights how surging artificial intelligence hardware demand is reshaping semiconductor manufacturing priorities.
